Samsung announces UFS 4.0 storage, promises improved performance and power efficiency – Times of India

Samsung Semiconductor, a unit of Samsung Electronics, has announced the Unified Flash Storage (UFS) 4.0, an upgrade over the currently used UFS 3.0 or UFS 3.1 storage technology. Samsung’s UFS 4.0 storage is based on the company’s Gen 7 V-NAND memory technology.
The UFS 4.0 storage from Samsung incorporates a proprietary controller with sequential read and write speeds of up to 4,200 MB/s and up to 2,800 MB/s, respectively. In layman’s terms, the UFS 4.0 has double the speed of UFS 3.1, which means your next smartphone will work much faster and smoother. For reference, the UFS 3.1 has a sequential read speed of 2,100 MB/s and a sequential read speed of 1,200 MB/s. Further, according to Samsung, the UFS 4.0 delivers a speed of up to 2.23 GB/s per lane.
Not just that, Samsung’s newly developed storage technology also improves power consumption. The UFS 4.0 offers a 46% improvement in power efficiency. Samsung claims that UFS 4.0 will deliver a sequential read speed of 6.0MBps per milliampere. So, users can expect better performance and improved battery life on devices using UFS 4.0 storage.
The UFS 4.0 storage technology is expected to debut on the upcoming Samsung Galaxy Z Fold 4 and Galaxy Z Flip 4. Moreover, next year’s Galaxy S series smartphone might also come with the UFS 4.0 storage. Apart from smartphones, UFS 4.0 will also be used in AR/VR devices in the future, along with the automotive industry.